SK Hynix HBM2E fi

SK Hynix starts mass production of HBM2E: The world’s fastest DRAM solution

A little over a year ago SK Hynix unveiled their HBM2E memory, boasting industry-leading bandwidth. Compared to current-gen, it features 50% more bandwidth and twice as much capacity. The new SK Hynix HBM2E standard supports >460GB per second with 1024 I/Os based on the 3.6 GBps speed performance per pin. To put things into perspective, it can 124 movies with a 1080p resolution, each of size 3.7GB per second. Or it can transfer two separate installations of Call of Duty: Warzone in a second. Your pick.

To achieve this technological marvel, SK Hynix utilizes the TSV (Through Silicon Via) technology by vertically stacking eight 16-gigabit chips to form a single dense package of 16GB. Using TSV, the upper and lower parts of the chip are connected through thousands of fine holes on the DRAM chip. Column-shaped paths penetrate the entire thickness of the silicon wafer, delivering data, commands, and currents. HBM2E is closely interconnected with GPUs and logic chips that are separated by only a few µm, resulting in faster and more efficient data transfer speeds. Compared to HBM2(current-gen) memory, it 30% smaller in size and up to 50% more power-efficient, thanks to the new packaging technology.

It is built specifically for supercomputers, industrial GPUs, and next-gen AI systems including Deep Learning Accelerator, which requires high-level computing performance. It is also expected to be used in the Exascale supercomputer: a high-performance computing system that can perform calculations a quintillion times per second. Jonghoon Oh, Executive Vice President and Chief Marketing Officer (CMO) at SK Hynix hopes to lead the industry with their premium memory products.

For more updates, stay tuned!

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Wonder what Samsung is doing now

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